𝔖 Bobbio Scriptorium
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Prebreakdown phenomena in GaAs epitaxial layers and FET's

✍ Scribed by Tsironis, C.


Book ID
114593320
Publisher
IEEE
Year
1980
Tongue
English
Weight
657 KB
Volume
27
Category
Article
ISSN
0018-9383

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## Abstract CuInTe~2~ thin films were deposited onto semi‐insulating (111)A‐oriented GaAs substrates by flash evaporation. Epitaxial growth was found in the substrate temperature range __T__~sub~ = 620 … 790 K. Above 750 K a second phase was found besides the chalcopyrite phase. All epitaxial films