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Power scalable semiconductor disk laser using multiple gain cavity

✍ Scribed by Saarinen, Esa J.; Härkönen, Antti; Suomalainen, Soile; Okhotnikov, Oleg G.

Book ID
115406942
Publisher
Optical Society of America
Year
2006
Tongue
English
Weight
79 KB
Volume
14
Category
Article
ISSN
1094-4087

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We demonstrate first GaSb-based semiconductor disk laser (SDL) emitting 0.6 W of output power at 2.5 mm. A gain structure comprising 15 strained In 0.35 Ga 0.65 As 0.09 Sb 0.91 quantum wells sandwiched between Al 0.35 Ga 0.65 As 0.035 Sb 0.965 barriers was grown by molecular beam epitaxy on (1 0 0)