Potentially and challenge of metal-organic molecular beam epitaxy
β Scribed by H. Heinecke
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 773 KB
- Volume
- 9
- Category
- Article
- ISSN
- 0921-5107
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π SIMILAR VOLUMES
GaN was grown by low angle incidence microchannel epitaxy (LAIMCE) using NH 3 -based metal-organic molecular beam epitaxy (NH 3 -based MOMBE). The growth mechanism was studied by varying the growth temperature and time. The effect of the incidence direction of precursors on lateral growth was also i
HfO 2 dielectric layers were grown on the p-type Si(1 0 0) substrate by metal-organic molecular beam epitaxy (MOMBE). Hafnium-tetrabutoxide [Hf(Oβ’t-C 4 H 9 ) 4 ] was used as a Hf precursor and argon gas was used as a carrier gas. The microstructure and thickness of HfO 2 films were measured by scann