Potential fluctuations due to Pb centres at the SiSiO2 interface

✍ Scribed by MJ Uren; KM Brunson; JH Stathis; E Cartier

• Book ID: 104306426
• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 275 KB
• Volume: 36
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(97)00052-x

✦ Synopsis

We show that the potential fluctuation model of Brews applies very accurately to Pb centres at the ( 111) and (100) interfaces. Vacuum annealed MOS samples were used which contained a particularly 'pure' interface largely dominated by the Pb-like defects. For the (100) interface, Pb0 and Pbl defects appear to have the same capture cross-section.