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Post-irradiation annealing effect on the growth of the Z3 band in LiF:Mg crystal

✍ Scribed by Takeuchi, N. ;Inabe, K. ;Nakamura, S.


Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
212 KB
Volume
65
Category
Article
ISSN
0031-8965

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Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi