Porosity and structure evolution of a Si
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L. Broussous; W. Puyrenier; D. Rebiscoul; V. Rouessac; A. Ayral
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Article
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2007
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Elsevier Science
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English
โ 195 KB
In the back end of line (BEOL) interconnections for 65 nm and beyond technology nodes, the integration of porous dielectric materials is now needed to improve signal propagation. In order to develop and optimize etching and cleaning process steps that may degrade the dielectric material, the charact