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Post-deposition annealing effect on In2S3 thin films deposited using SILAR technique

โœ Scribed by R. Ranjith; Teny Theresa John; C. Sudha Kartha; K.P. Vijayakumar; T. Abe; Y. Kashiwaba

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
688 KB
Volume
10
Category
Article
ISSN
1369-8001

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Effects of post-oxidation annealing temperature on ZrO2 thin film deposited on 4H-SiC substrate
โœ Tedi Kurniawan; Yew Hoong Wong; Kuan Yew Cheong; Jeong Hyun Moon; Wook Bahng; Kh ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 630 KB

ZrO 2 thin film has been formed on n-type 4H-SiC substrate using a combination of metal sputtering ( $ 25 nm thick) and thermal oxidation (15 min at 500 1C) processes. Effects of post-oxidation annealing temperature (600-900 1C) on the physical and electrical properties of the thin film have been in