Effects of post-oxidation annealing temp
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Tedi Kurniawan; Yew Hoong Wong; Kuan Yew Cheong; Jeong Hyun Moon; Wook Bahng; Kh
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Article
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2011
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Elsevier Science
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English
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ZrO 2 thin film has been formed on n-type 4H-SiC substrate using a combination of metal sputtering ( $ 25 nm thick) and thermal oxidation (15 min at 500 1C) processes. Effects of post-oxidation annealing temperature (600-900 1C) on the physical and electrical properties of the thin film have been in