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Post-annealing effects on the shallow-junction characteristics caused by high-fluence 77 keV BSi molecular ion implantations at room and liquid nitrogen temperatures

โœ Scribed by J.H. Liang; S.C. Wang


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
458 KB
Volume
266
Category
Article
ISSN
0168-583X

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