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Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation

✍ Scribed by J.H. Liang; Y.J. Sang; C.-H. Wang; T.W. Wang; J.Y. Hsu; H. Niu; M.S. Tseng

No coin nor oath required. For personal study only.

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Post-annealing effects on shallow-junction characteristics caused by 20&#xa0;keV BGe molecular ion implantation