The fracture of single crystal gallium arsenide (GaAs) semi-conducting wafers was studied. Prismatic beam specimens, cut at different crystallographic orientations from thin wafers, were loaded to failure in four-point bending. Fracture in these crystals occurred predominantly on the { 1 IO} family
โฆ LIBER โฆ
Positronium from a gallium arsenide wafer surface
โ Scribed by P.C. Rice-Evans; D.L. Smith
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 223 KB
- Volume
- 141
- Category
- Article
- ISSN
- 0375-9601
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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con