๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Positron annihilation in boron-implanted n-type silicon

โœ Scribed by Ming-Cheng Hung; Juh Tseng Lue; Ching-Kai Yeh


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
256 KB
Volume
32
Category
Article
ISSN
0038-1098

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


The formation and evolution of vacancy-t
โœ B.S. Li; C.H. Zhang; Y.R. Zhong; D.N. Wang; L.H. Zhou; Y.T. Yang; H.H. Zhang; L. ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 254 KB

The Doppler broadening spectrum of a silicon wafer was measured using a variable-energy positron beam to investigate the effects of vacancy-type defects induced by 180 keV Ar ion implantation. The Sparameter in the damaged layer decreases with annealing temperature up to 673 K, and then increases wi