The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It
Position-dependence of the impurity binding energy in quantum well wires
โ Scribed by J.A. Brum
- Book ID
- 107854763
- Publisher
- Elsevier Science
- Year
- 1985
- Tongue
- English
- Weight
- 216 KB
- Volume
- 54
- Category
- Article
- ISSN
- 0038-1098
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๐ SIMILAR VOLUMES
Using a variational procedure within the effective-mass approximation we have calculated the binding energies of shallow-donor impurities in cylindrical GaAs quantum-well wires, in an axial magnetic field and an infinite confinement potential. In contrast to the previous results in quantum wells, we
Within the effective-mass approximation a simple method to calculate the spectra of a shallowdonor impurity in GaAsยฑ(Ga, Al)As cylindrical quantum-well wires (QWWs) suitable for any confinement potential shape in radial direction is proposed. A trial function is taken as the product of a hydrogenic