Binding energy of hydrogenic impurities in quantum well wires of InSb/GaAs
β Scribed by B.Zh. Poghosyan; G.H. Demirjian
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 115 KB
- Volume
- 338
- Category
- Article
- ISSN
- 0921-4526
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β¦ Synopsis
The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when the wire radius is less than the Bohr radius of the impurity, the nonparabolisity of dispersion law of charge carriers leads to a considerable increase of the binding energy.
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Within the effective-mass approximation a simple method to calculate the spectra of a shallowdonor impurity in GaAsΒ±(Ga, Al)As cylindrical quantum-well wires (QWWs) suitable for any confinement potential shape in radial direction is proposed. A trial function is taken as the product of a hydrogenic
We have studied the magnetic field effects on the diamagnetic susceptibility and binding energy of a hydrogenic impurity in a quantum well-wire by taking into account spatially dependent screening. Using the effective-mass approximation within a variational scheme, binding energy and diamagnetic sus