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Binding energy of hydrogenic impurities in quantum well wires of InSb/GaAs

✍ Scribed by B.Zh. Poghosyan; G.H. Demirjian


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
115 KB
Volume
338
Category
Article
ISSN
0921-4526

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✦ Synopsis


The binding energy of a hydrogen-like impurity in a thin size-quantized wire of the InSb/GaAs semiconductors with Kane's dispersion law has been calculated as a function of the radius of the wire and the location of the impurity with respect to the axis of the wire, using a variational approach. It is shown that when the wire radius is less than the Bohr radius of the impurity, the nonparabolisity of dispersion law of charge carriers leads to a considerable increase of the binding energy.


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