## Abstract The silicon incorporation in diamond is an important issue as silicon is widely used as a substrate for the growth of polycrystalline thin films. Incorporated silicon impurities are suspected to come from the hydrogen etching of the silicon substrate. To clearly establish this point we
β¦ LIBER β¦
Porous silicon capping by CVD diamond
β Scribed by A.J. Fernandes; P.J. Ventura; R.F. Silva; M.C. Carmo
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 223 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0042-207X
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