Polysilicon as a material for microsensor applications

✍ Scribed by E. Obermeier; P. Kopystynski

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 985 KB
• Volume: 30
• Category: Article
• ISSN: 0924-4247
• DOI: 10.1016/0924-4247(92)80210-t

✦ Synopsis

Important characterutlcs of boron-doped

LPCVD polyslhcon layers with regard to sensor apphcatlons are presented Properks such as the reslstlvlty, temperature coefficient of the resistance, gauge factor and long-term stability are described A pressure sensor utlhzmg polyskon piezoreslstors with a measurement range of I bar and a sensltlvlty of roughly 11 mV/V FS, a laser-trimmed polyslhcon temperature sensor with a sensitivity of -3 4 x lo-' K-' and non-hneanty of less than 0 5% and a pressure sensor with polyslhcon-based on-chip cahbratlon and temperature compensation are described