Polysilicon as a material for microsenso
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E. Obermeier; P. Kopystynski
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Article
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1992
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Elsevier Science
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English
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## Important characterutlcs of boron-doped LPCVD polyslhcon layers with regard to sensor apphcatlons are presented Properks such as the reslstlvlty, temperature coefficient of the resistance, gauge factor and long-term stability are described A pressure sensor utlhzmg polyskon piezoreslstors with