𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Polysilanes: Photochemistry and deep UV lithography

✍ Scribed by R. D. Miller; G. Wallraff; N. Clecak; R. Sooriyakumaran; J. Michl; T. Karatsu; A. J. McKinley; K. A. Klingensmith; J. Downing


Publisher
Society for Plastic Engineers
Year
1989
Tongue
English
Weight
497 KB
Volume
29
Category
Article
ISSN
0032-3888

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Deep uv lithography
πŸ“‚ Article πŸ“… 1976 πŸ› Elsevier Science 🌐 English βš– 145 KB

35 1674. Deep uv lithography. (USA) Using deep uv light ranging from 2000 to 2600 A, submicrometer patterns in photoresist with height-to-width aspect ratios as high as 15 can be achieved. The well known electron-beam positive resist, polymethyl methacrylate (PMMA), is used as the deep uv photoresis

Polysiloxanes for deep UV lithography
✍ J.M. Shaw; M. Hatzakis; J. Parasczcak; E. Babich πŸ“‚ Article πŸ“… 1985 πŸ› Elsevier Science 🌐 English βš– 934 KB
Epoxy resins for deep UV lithography
✍ K. J. Stewart; M. Hatzakis; J. M. Shaw πŸ“‚ Article πŸ“… 1989 πŸ› Society for Plastic Engineers 🌐 English βš– 361 KB
Linewidth control in deep UV contact lit
✍ Michel Iost; Serge Gourrier; Bernard Bru; Patrick Rabinzohn; FranΓ§ois Pasqualini πŸ“‚ Article πŸ“… 1987 πŸ› Elsevier Science 🌐 English βš– 248 KB