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Polymer p-i-n Junction Photovoltaic Cells

✍ Scribed by Jun Gao; Gang Yu; Alan J. Heeger


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
185 KB
Volume
10
Category
Article
ISSN
0935-9648

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## Abstract Structures composed of a p^++^(Zn)GaAs layer deposited by MOVPE on a n(Te)‐doped GaSb substrate were fabricated, with the purpose of obtaining GaSb p‐n homo‐junctions, through the diffusion of Zn into the substrate, for photovoltaic applications. Different Zn doping levels and post‐grow