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Polaron Effect on the Optical Absorption Edge of Semiconductors

✍ Scribed by B. Velický

Publisher
John Wiley and Sons
Year
1967
Tongue
English
Weight
140 KB
Volume
19
Category
Article
ISSN
0370-1972

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Optical Absorption Edge of Heavily Doped
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## Abstract Using the Green function methods in the Feynman‐path integral formulation, applied to disordered systems and developed already in previous papers, the optical absorption edge of heavily doped semiconductors in zero magnetic field at low temperatures is investigated. Two band‐structure m

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