Polarization induced hole doping in graded AlxGa1−xN (x = 0.7 ∼ 1) layer grown by molecular beam epitaxy

✍ Scribed by Li, Shibin; Zhang, Ting; Wu, Jiang; Yang, Yajie; Wang, Zhiming; Wu, Zhiming; Chen, Zhi; Jiang, Yadong

• Book ID: 120359706
• Publisher: American Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 792 KB
• Volume: 102
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.4792685