Polar mobility of electrons and holes
β Scribed by D. Kranzer
- Publisher
- John Wiley and Sons
- Year
- 1972
- Tongue
- English
- Weight
- 153 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
The spin-dependent lateral mobility of the hole gas in a AlAs=GaAs quantum well inserted by two Ga1-xMnxAs metallic ferromagnetic layers is studied. A self-consistent approach is used to calculate the electronic structure taking into account the direct Coulomb Hartree and exchange-correlation terms,
Charge carrier mobilities are presented over a wide temperature range (77-300 K) for electrons and holes in naphthalene .md perdeuterated naphthalene for the a. b, and c' crystallographic directions. Consideration is given to the implications of the observed deuteration effects on the validity of ba