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Polar heterostructure for multifunction devices: theoretical studies

✍ Scribed by Yuh-Renn Wu; Singh, J.

Book ID
114617691
Publisher
IEEE
Year
2005
Tongue
English
Weight
477 KB
Volume
52
Category
Article
ISSN
0018-9383

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## Abstract The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.