Polarization-engineering in group III-nitride heterostructures: New opportunities for device design

✍ Scribed by Jena, Debdeep ;Simon, John ;Wang, Albert Kejia ;Cao, Yu ;Goodman, Kevin ;Verma, Jai ;Ganguly, Satyaki ;Li, Guowang ;Karda, Kamal ;Protasenko, Vladimir ;Lian, Chuanxin ;Kosel, Thomas ;Fay, Patrick ;Xing, Huili

• Book ID: 105366088
• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 791 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201001189

✦ Synopsis

Abstract

The role of spontaneous and piezoelectric polarization in III–V nitride heterostructure devices is discussed. Problems as well as opportunities in incorporating polarization in abrupt and graded heterojunctions composed of binary, ternary, and quaternary nitrides are outlined.