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Point defects and diffusion in cadmium telluride

โœ Scribed by R. Grill; A. Zappettini


Book ID
108236042
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
783 KB
Volume
48-49
Category
Article
ISSN
0960-8974

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The diffusion of Ga into bulk-grown, single crystal slices of CdTe was studied in the temperature range 350-811 ยฐC where the diffusion anneals were carried out in sealed silica capsules using three different types of diffusion sources. These were: excess Ga used alone, or with either excess Cd or ex