Point defect generation and arsenic diffusion in silicon in inert ambient : Aleksander Bakowski. Electron. Technol.21(3/4), 15 (1988)

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 133 KB
• Volume: 32
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/0026-2714(92)90225-a