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Diffusion of ion implanted phosphorus in silicon in inert ambient : Alekander Bakowski. Electron. Technol.21(3/4), 3 (1988)

Publisher: Elsevier Science
Year: 1992
Tongue: English
Weight: 129 KB
Volume: 32
Category: Article
ISSN: 0026-2714
DOI: 10.1016/0026-2714(92)90250-o

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