pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions

✍ Scribed by Christian Isheden; Per-Erik Hellström; Martin von Haartman; Henry H. Radamson; Mikael Östling

• Book ID: 104064198
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 229 KB
• Volume: 8
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/j.mssp.2004.09.045

✦ Synopsis

A new source/drain formation concept based on selective Si etching followed by selective regrowth of in situ B-doped Si 1Àx Ge x is presented. Both process steps are performed in the same reactor to preserve the gate oxide. Well-behaved transistors are demonstrated with a negligibly low gate-to-substrate leakage current.