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Plastic relaxation of metamorphic single layer and multilayer InGaAs/GaAs structures

✍ Scribed by Dunstan, D. J.; Kidd, P.; Fewster, P. F.; Andrew, N. L.; Grey, R.; David, J. P. R.; González, L.; González, Y.; Sacedón, A.; González-Sanz, F.


Book ID
120443870
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
709 KB
Volume
65
Category
Article
ISSN
0003-6951

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## Abstract The series of samples is investigated to verify the validity of the scattering theory within the layers of different relaxation degree. The samples composed of In~0.06~Ga~0.94~As layer of different thicknesses on GaAs [001] substrates were grown using MBE technique. The symmetric and as