Plasma polymer deposition from mixture of tetramethoxysilane and oxygen on PET films and their oxygen gas barrier properties
β Scribed by N. Inagaki; S. Tasaka; M. Makino
- Publisher
- John Wiley and Sons
- Year
- 1997
- Tongue
- English
- Weight
- 197 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0021-8995
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β¦ Synopsis
Plasma polymerization of silane compounds has been discussed for deposition of SiOx positron emission tomography (PET) films at room temperature. A mixture of tetramethoxysilane (TMOS) and oxygen containing 60 mol % O 2 is a preferable raw material for SiOx formation by plasma polymerization. The deposited plasma polymers consist mainly of Si{O networks with small amount of Si{OH and Si{C groups. A part of Si{O networks in the plasma polymers is distorted by the Si{OH and Si{C groups. The oxygen permeability coefficient for the plasma polymer itself is 2.1 1 10 015 (STP) cm 3 /cm/cm 2 /s/cm Hg, which is lower that that for hydrolyzed ethylene-vinylacetate copolymer (Eval) and poly(vinylidene chloride) (Saran). Conclusively, the plasma polymer deposited from the mixture of TMOS and oxygen containing 60 mol % O 2 is a material with good oxygen barrier properties.
π SIMILAR VOLUMES
To prepare silicon oxide (SiOx)-deposited poly(ethylene terephthalate) films with high oxygen gas barrier capability, SiOx deposition by plasma polymerization has been investigated from the viewpoint of chemical composition. Tetramethoxysilane (TMOS) is suitable as a starting material for the synthe
Films were produced by plasma enhanced chemical vapor deposition (PECVD) of tetramethylsilane (TMS) -helium-argon mixtures with either oxygen or nitrogen in a vacuum system fed with radiofrequency power. Actinometric optical emission spectroscopy was used to determine trends in the concentrations of
Mixtures of hexamethyldisiloxane [HMDSiO, (CH 3 ) 3 SiOSi(CH 3 ) 3 ] and oxygen are plasma polymerized at different oxygen pressures (P O 2 Ο 1.3-11.4 Pa) and a fixed monomer pressure (P m Ο 2.6 Pa). The discharge power is kept at 100 W throughout the work. Nanometer-size holes in the deposited film