𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Plasma-enhanced silicon nitride deposition for thin film transistor applications

✍ Scribed by L.J. Quinn; S.J.N. Mitchell; B.M. Armstrong; H.S. Gamble

Book ID
115990384
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
286 KB
Volume
187
Category
Article
ISSN
0022-3093

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Plasma enhanced chemical vapor deposited
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistorsβ€”a critical review
✍ Yue Kuo πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 400 KB

Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiN x ) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the