An important advantage of silicon carbide as a material for power electronics is its extremely high electric field strength. The practical use of this advantage requires the elimination of regions of high electric field concentration in the design of power devices and efficient device passivation. L
β¦ LIBER β¦
Plasma-assisted SiC oxidation for power device fabrication
β Scribed by P. Mandracci; S. Ferrero; S. Porro; C. Ricciardi; G. Richieri; L. Scaltrito
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 114 KB
- Volume
- 238
- Category
- Article
- ISSN
- 0169-4332
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