Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ร 2 0) orientation of the GaN epilaye
โฆ LIBER โฆ
Plane of polarization rotation induced by a non-Minkowskian spacetime
โ Scribed by E. A. Evangelidis
- Publisher
- Springer Netherlands
- Year
- 1979
- Tongue
- English
- Weight
- 231 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0004-640X
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