𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Planar InSb photodiodes fabricated by Be and Mg ion implantation

✍ Scribed by C.E. Hurwitz; J.P. Donnelly

Book ID
107856175
Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
395 KB
Volume
18
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Be- and Mg-ion implantation-induced dama
Be- and Mg-ion implantation-induced damage in InSb
✍ A. DeclΓ©my; T. Sauvage; E. Kotai; P. LΓ©vΓͺque; M.I. Abd El-Ati πŸ“‚ Article πŸ“… 2001 πŸ› Elsevier Science 🌐 English βš– 119 KB

The electronic characteristics of narrow-gap III-V semiconductor InSb make this material play an important role in infrared detectors. In this material, p-n junctions are currently achieved by light Be-ion implantation to reduce the implantation-induced damage. But the hazardous character of berylli