Electrochemistry has superior properties respect to the other measurement systems because of the rapid, simple and sensitive characteristics. For all these reasons, electrochemical sensors are playing a key role in many scientific sectors. Planar electrochemical sensors present many advantages respe
Planar Hall resistance sensor for biochip application
โ Scribed by Thanh, N. T. ;Parvatheeswara Rao, B. ;Duc, N. H. ;Kim, CheolGi
- Book ID
- 105364696
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 198 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
โฆ Synopsis
Abstract
In this work, we introduce a new type of sensor by using planar Hall effect in spin valve structure for biochip application due to advantage of increasing sensor sensitivity. A single Dynabeads^ยฎ^ Mโ280 Streptavidin detection has been accomplished with the sensor pattern size of 3 ร 3 ยตm^2^ that was fabricated from NiFe(6.0 nm)/Cu(3.5 nm)/NiFe(3.0 nm)/IrMn(10.0 nm) spin valve structure. Furthermore, it is also developed to integrated arrays by including 24 sensor patterns. In comparison with the other groups, our sensor performance is highlighted with the advantages of increased stability and high signal to noise; as such, the planar Hall effect sensor's behavior has proved a possibility for detection of the biomolecule. It is also feasible to provide a vehicle for studying other molecule interactions, particular single DNA molecule and for the detection of binding of the streptavidin functionalized magnetic beads to sensor bound biotin. Due to the simple fabrication scheme, this kind of Planar Hall effect based sensor can be easily integrated into other systems for applications. (ยฉ 2008 WILEYโVCH Verlag GmbH & Co. KGaA, Weinheim)
๐ SIMILAR VOLUMES
The planar Hall effect (PHE) sensor with a junction size of 3 m ร 3 m for a single micro-bead detection has been fabricated successfully using a typical spin-valve thin film Ta(5)/NiFe(16)/Cu(1.2)/NiFe(2)/IrMn(15)/Ta(5) nm. The PHE sensor exhibits a sensitivity of about 7.2 V Oe -1 in the magnetic f