✦ LIBER ✦

Planar edge termination for 4H-silicon carbide devices

✍ Scribed by Alok, D.; Raghunathan, R.; Baliga, B.J.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Planar Nearly Ideal Edge-Termination Tec

✍ Ozbek, A.M.; Baliga, B.J. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 178 KB

Planar edge termination design and techn

✍ Perez, R.; Tournier, D.; Perez-Tomas, A.; Godignon, P.; Mestres, N.; Millan, J. 📂 Article 📅 2005 🏛 IEEE 🌐 English ⚖ 619 KB

RF Planar Inductor Electrical Performanc

✍ Gautier, G.; Capelle, M.; Billoue, J.; Cayrel, F.; Poveda, P. 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 264 KB

Demonstrating the potential of 6-H silic

✍ Palmour, J.W.; Edmond, J.A.; Carter, C.H., Jr. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 269 KB

A new edge termination technique for SiC

✍ Shuntao Hu; Kuang Sheng 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 542 KB

4H-silicon carbide Schottky barrier diod

✍ Eriksson, J.; Rorsman, N.; Zirath, H. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 602 KB