Picosecond spectroscopy of hydrogenated MBE-GaAs

✍ Scribed by M. Capizzi; C. Coluzza; P. Frankl; A. Frova; M. Colocci; M. Gurioli; A. Vinattieri; R.N. Sacks

• Publisher: Elsevier Science
• Year: 1991
• Tongue: English
• Weight: 322 KB
• Volume: 170
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/0921-4526(91)90178-h

✦ Synopsis

Picosecond-resolved and steady-state photoluminescence at LHe temperature in low-energy ion-gun hydrogenated GaAs/GaAIAs heterostructures are reported. The exciton in the GaAs layer shows an increase in lifetime -up to a factor of 3 for moderate hydrogenation, followed by a sharp decrease below the value for the untreated sample, for higher H doses. Luminescence efficiency shows a consistent behavior. Incorporation of H generates a strong D-A band falling -64 meV below the gap energy. The behavior for heavy hydrogenation indicates the formation of a new type of deep defect, not ascribed to surface damage, because of the protective GaAIAs layer, plus the fact that the excitonic emission of the latter shows no variation.