Picosecond-resolved and steady-state photoluminescence at LHe temperature in low-energy ion-gun hydrogenated GaAs/GaAIAs heterostructures are reported. The exciton in the GaAs layer shows an increase in lifetime -up to a factor of 3 for moderate hydrogenation, followed by a sharp decrease below the
β¦ LIBER β¦
Far-infrared donor spectroscopy of MBE-GaAs
β Scribed by F. Kuchar; R. Meisels; G. Weimann; H. Burkhard
- Publisher
- Springer
- Year
- 1984
- Tongue
- English
- Weight
- 266 KB
- Volume
- 33
- Category
- Article
- ISSN
- 1432-0630
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