Picosecond relaxation of Ni-centers in II–VI semiconductors
✍ Scribed by R. Heitz; A. Hoffmann; I. Broser
- Book ID
- 103959865
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 789 KB
- Volume
- 1
- Category
- Article
- ISSN
- 0925-3467
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✦ Synopsis
The internal relaxation processes of the 3d-center Ni 2~and the recombination of photogenerated holes with Ni-centers are investigated by means of time resolved luminescence spectroscopy of the 3T 1(P)-3T 1(F) Ni 2~transition in ZnS, CdS, ZnSe and CdSe. Ultrafast recombination processes starting at the 3T 1 (P)-states with time constants down to 60 Ps are observed. In addition to the detected dipole transitions, which are allowed by a strong admixture of p-like wavefunctions to the 3d-states of Ni 2 f, competing nonradiative recombination processes are important. Radiative and nonradiative transition rates are determined, The excitation processes of the 3T 1 (P)-3T 1 (F) luminescence are studied in cw and time resolved experiments. Free holes are trapped at Ni~-centersforming shallow effective mass-like states, trapping times of 30 Ps in ZnS and 50 ps in CdS are observed. The subsequent intracenter relaxation to the luminescent 3T 1 (P)-state takes place within a few picoseconds by radiationless cascade processes involving the 'T2(G)-state. After some nanoseconds the dynamical behaviour of the Ni 2~-luminescence is determined by energy transfer processes between shallow donors and the Ni2~-centers. The investigations give evidence of strong electronic coupling of the Ni2~(d-d)-transitions to the host materials.
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