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Picosecond pulse generation in CW semiconductor lasers using a novel regenerative gain-switching technique

✍ Scribed by Yan, C.; Reddy, K.P.J.; Jain, R.K.; McInerney, J.G.

Book ID
119783806
Publisher
IEEE
Year
1993
Tongue
English
Weight
408 KB
Volume
5
Category
Article
ISSN
1041-1135

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## Abstract Various characteristics of a gain‐switched InGaAlP Fabry–Perot semiconductor laser operating with a center wavelength of 650 nm for short‐distance ultra‐fast optical transmission applications. The optimum gain switching conditions are studied in detail with this semiconductor laser. Β© 2

Addendum to: Picosecond pulse generation
Addendum to: Picosecond pulse generation for visible semiconductor laser operating at 650-NM wavelength with the use of the gain-switching technique
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## Abstract Originally published Microwave Opt Technol Lett 35: 65–67, 2002. Β© 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 342–342, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10584