This completely reorganized edition of the classic reference provides detailed information on the underlying physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. Integrates nearly 1,000 references to important original research papers
Physics of Semiconductor Devices
โ Scribed by J. P. Colinge, C. A. Colinge (auth.)
- Publisher
- Springer US
- Year
- 2002
- Tongue
- English
- Leaves
- 442
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
โฆ Synopsis
Physics of Semiconductor Devices is a textbook aimed at college undergraduate and graduate teaching. It covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. As a prerequisite, this text requires mathematics through differential equations and modern physics where students are introduced to quantum mechanics. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described.
Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner. A series of these Matlab problems is based on a simple finite-element solution of semiconductor equations. These yield the exact solution to equations that have no analytical solutions and are usually solved using approximations, such as the depletion approximation. The exact numerical solution can then be graphically compared to the solution using the approximation.
The different chapters of Physics of Semiconductor Devices cover the following material: Energy Band Theory. Theory of Electrical Conduction. Generation/Recombination Phenomena. The PN Junction Diode. Metal-semiconductor contacts. JFET and MESFET. The MOS Transistor. The Bipolar Transistor. Heterojunction Devices. Quantum-Effect Devices. Semiconductor Processing.
โฆ Table of Contents
Energy Band Theory....Pages 1-49
Theory of Electrical Conduction....Pages 51-72
Generation/Recombination Phenomena....Pages 73-93
The PN Junction Diode....Pages 95-137
Metal-semiconductor Contacts....Pages 139-151
Jfet and Mesfet....Pages 153-164
The MOS Transistor....Pages 165-250
The Bipolar Transistor....Pages 251-313
Heterojunction Devices....Pages 315-330
Quantum-effect Devices....Pages 331-362
Semiconductor Processing....Pages 363-408
โฆ Subjects
Electronic and Computer Engineering; Optical and Electronic Materials; Solid State Physics and Spectroscopy
๐ SIMILAR VOLUMES
Appropriate for Sr or first year grad. courses on device physics. Theories and models presented in book are implemented in microcomputer programs used for modelling these devices. Includes over 150 problems. (vs. Sze, Muller/Kamins, Wang).
Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to
The Third Edition of the standard textbook and reference in the field of semiconductor devicesThis classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and pe
The Third Edition of the standard textbook and reference in the field of semiconductor devices <p>This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts an
<p><p>This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal cohe