A new unified analytical model for submicron MOSFETs, valid for all regions of operation (including deep subthreshold), is presented in this paper. It accounts for the changes in the subthreshold slope with respect to the applied drain voltage. A new unification technique is proposed, which preserve
Physics-based circuit-level model for submicron MOSFETs
โ Scribed by R.M.D. Velghe; F.M. Klaassen
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 164 KB
- Volume
- 15
- Category
- Article
- ISSN
- 0167-9317
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