𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Physical model for characterizing and simulating a FLOTOX EEPROM device

✍ Scribed by Ching-Yuan Wu; Chiou-Feng Chen


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
830 KB
Volume
35
Category
Article
ISSN
0038-1101

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Physically based modelling of damage, am
✍ J.E. Rubio; M. Jaraiz; I. Martin-Bragado; R. Pinacho; P. Castrillo; J. Barbolla πŸ“‚ Article πŸ“… 2004 πŸ› Elsevier Science 🌐 English βš– 140 KB

Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended