Physically based modelling of damage, am
β
J.E. Rubio; M. Jaraiz; I. Martin-Bragado; R. Pinacho; P. Castrillo; J. Barbolla
π
Article
π
2004
π
Elsevier Science
π
English
β 140 KB
Current advanced CMOS source/drain engineering involves the use of amorphizing implants with 3D geometry. Upon annealing, the induced transient enhanced diffusion (TED) can only be accurately predicted if the amorphized region is correctly modeled, as well as the formation and evolution of extended