✦ LIBER ✦

Physical explanation of the barrier height temperature dependence in metal-oxide-semiconductor leakage current models

✍ Scribed by Schroeder, Dietmar; AvellaÌn, Alejandro

Book ID: 120160032
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 400 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1587256

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature dependence of enhanced hole

Temperature dependence of enhanced hole mobility in uniaxial strained p-channel metal-oxide-semiconductor field-effect transistors and insight into the physical mechanisms

✍ Yang, Xiaodong; Parthasarathy, Srivatsan; Sun, Yongke; Koehler, Andrew; Nishida, 📂 Article 📅 2008 🏛 American Institute of Physics 🌐 English ⚖ 615 KB

Temperature dependence of the tunneling

Temperature dependence of the tunneling current in metal-oxide-semiconductor devices due to the coupling between the longitudinal and transverse components of the electron thermal energy

✍ Mao, Ling-Feng 📂 Article 📅 2007 🏛 American Institute of Physics 🌐 English ⚖ 679 KB