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Physical and electrical properties of band-engineered SiO2/(TiO2)x(SiO2)1−xstacks for nonvolatile memory applications

✍ Scribed by Oh, Jinho; Na, Heedo; Mok, In-Su; Kim, Jonggi; Lee, Kyumin; Sohn, Hyunchul

No coin nor oath required. For personal study only.

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