Enhanced tunneling properties of band-engineered (HfO2)x(SiO2)1−x/SiO2 double dielectric layers for non-volatile flash memory device

✍ Scribed by Min-Young Heo; Jonggi Kim; Hae-Yoon Kang; Jinho Oh; Kyumin Lee; Hyunchul Sohn

• Book ID: 113513948
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 911 KB
• Volume: 11
• Category: Article
• ISSN: 1567-1739
• DOI: 10.1016/j.cap.2010.11.118