Photovoltaic effects in InGaN structures with p-n junctions

✍ Scribed by Yang, Cuibai ;Wang, Xiaoliang ;Xiao, Hongling ;Ran, Junxue ;Wang, Cuimei ;Hu, Guoxin ;Wang, Xinhua ;Zhang, Xiaobin ;Li, Jianping ;Li, Jinmin

• Book ID: 105364473
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 235 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200723202

✦ Synopsis

Abstract

InGaN photovoltaic structures with p–n junctions have been fabricated by metal organic chemical vapour deposition. Using double‐crystal X‐ray diffraction measurements, it was found that the room temperature band gaps of p‐InGaN and n‐InGaN films were 2.7 and 2.8 eV, respectively. Values of 3.4 × 10^–2^ mA cm^–2^ short‐circuit current, 0.43 V open‐circuit voltage and 0.57 fill factor have been achieved under ultraviolet illumination (360 nm), which were related to p–n junction connected back‐to‐back with a Schottky barrier and many defects of the p‐InGaN film. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)