𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Photovoltaic characteristic of Al-doped ZnO/Si heterojunction

✍ Scribed by Shufang Wang; Mingjing Chen; Xiaohui Zhao; Jingchun Chen; Wei Yu; Jianglong Wang; Guangsheng Fu


Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
323 KB
Volume
405
Category
Article
ISSN
0921-4526

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Electrical characterization of p-ZnO/p-S
✍ S. Majumdar; S. Chattopadhyay; P. Banerji πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 363 KB

Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It

Hydrothermal synthesis of Al-doped ZnO n
✍ Sining Yun; Juneyoung Lee; Jahyun Yang; Sangwoo Lim πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 733 KB

High-density, single-crystal, quasi-aligned, Al-doped ZnO nanorod arrays were grown on a silicon substrate using a low temperature hydrothermal process. Different Al atomic concentrations have been successfully doped into the ZnO lattice using different Zn and Al precursors in the synthesis solution

Formation of Al–N co-doped p-ZnO/n-Si (1
✍ Manoj Kumar; Sang-Kyun Kim; Se-Young Choi πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 141 KB

Al-N) thin films were grown on n-Si (1 0 0) substrate by RF co-sputtering technique. As-grown ZnO:Al-N film exhibited n-type conductivity whereas on annealing in Ar ambient the conduction of ZnO:Al-N film changes to p-type, typically at 600 8C the high hole concentration of ZnO:Al-N co-doped film wa