Photovoltaic characteristic of Al-doped ZnO/Si heterojunction
β Scribed by Shufang Wang; Mingjing Chen; Xiaohui Zhao; Jingchun Chen; Wei Yu; Jianglong Wang; Guangsheng Fu
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 323 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Nitrogen doped p-ZnO film, with urea as nitrogen source, is fabricated by pulsed laser deposition on well-cleaned p-type (1 0 0) Si substrates. The structural and electrical properties of the p-p heterojunction are investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It
High-density, single-crystal, quasi-aligned, Al-doped ZnO nanorod arrays were grown on a silicon substrate using a low temperature hydrothermal process. Different Al atomic concentrations have been successfully doped into the ZnO lattice using different Zn and Al precursors in the synthesis solution
Al-N) thin films were grown on n-Si (1 0 0) substrate by RF co-sputtering technique. As-grown ZnO:Al-N film exhibited n-type conductivity whereas on annealing in Ar ambient the conduction of ZnO:Al-N film changes to p-type, typically at 600 8C the high hole concentration of ZnO:Al-N co-doped film wa