Photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor

✍ Scribed by Wei-Chou Wang; Hsi-Jen Pan; Kong-Beng Thei; Kun-Wei Lin; Kuo-Hui Yu; Chin-Chuan Cheng; Shiou-Ying Cheng; Wen-Chau Liu

• Publisher: Elsevier Science
• Year: 2001
• Tongue: English
• Weight: 267 KB
• Volume: 29
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2001.0978

✦ Synopsis

A novel photonic-sensitive InAlGaAs/InP negative-differential-resistance heterojunction bipolar transistor (NDR-HBT) is fabricated and demonstrated. Due to the appropriately designed narrow base width and the employment of a δ-doped sheet at the emitter-base (E-B) heterojunction, the base resistance effect results in the significant NDR phenomenon. In addition, the experimental results show that the device studied is very sensitive to the applied light source. The N-shaped NDR phenomena are clearly observed under illumination. This phenomenon is attributed to the base resistance and barrier lowering effect resulting from holes induced by the applied light source.