Subject classification: 85.60.Jb; S7.14 An intermediate layer consisting of AlN/AlGaN was used in the growth of InGaN multiple-quantum-well LEDs structure on Si(111) substrates. Crack-free films in 2 inch wafer and high-brightness LEDs were obtained. At 20 mA, the voltage is about 8.0 and 16.0 V for
โฆ LIBER โฆ
Photon Recycling White Light Emitting Diode Based on InGaN Multiple Quantum Well Heterostructure
โ Scribed by Nikolaev, V.V. ;Portnoi, M.E. ;Eliashevich, I.
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 77 KB
- Volume
- 183
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
InGaN Multiple-Quantum-Well Light Emitti
โ
Zhang, B.J. ;Egawa, T. ;Ishikawa, H. ;Nishikawa, N. ;Jimbo, T. ;Umeno, M.
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 89 KB
๐ 1 views
Spectra and Quantum Efficiency of Light-
โ
Yunovich, A. E. ;Kudryashov, V. E. ;Mamakin, S. S. ;Turkin, A. N. ;Kovalev, A. N
๐
Article
๐
1999
๐
John Wiley and Sons
๐
English
โ 237 KB
๐ 2 views
Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 ยฑ ยฑ6 to 10 ยฑ ยฑ1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp
Effect of an Electric Field on the Elect
โ
P. de Mierry; S. Dalmasso; B. Beaumont; P. Gibart
๐
Article
๐
1999
๐
John Wiley and Sons
๐
English
โ 149 KB
๐ 2 views
Impact of Internal Electric Field and Lo
โ
Chichibu, S.F. ;Sota, T. ;Wada, K. ;Brandt, O. ;Ploog, K.H. ;DenBaars, S.P. ;Nak
๐
Article
๐
2001
๐
John Wiley and Sons
๐
English
โ 151 KB
๐ 2 views